| 000 | 01200cam a2200325 a 4500 | ||
|---|---|---|---|
| 999 |
_c4219 _d4219 |
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| 001 | 3786038 | ||
| 005 | 20190221102643.0 | ||
| 008 | 840326s1984 gw a b 001 0 eng | ||
| 010 | _a 84005420 | ||
| 020 | _a0387129952 (U.S.) | ||
| 040 |
_aDLC _cDLC _dDLC |
||
| 041 | 1 | _aengrus | |
| 050 | 0 | 0 |
_aQC611.8.D66 _bS5513 |
| 082 | 0 | 0 |
_a537.6/22 _219 |
| 100 | 1 |
_aShklovskiĭ, B. I. _q(Boris Isaakovich), _d1944- |
|
| 240 | 1 | 0 |
_aĖlektronnye svoĭstva legirovannykh poluprovodnikov. _lEnglish |
| 245 | 1 | 0 |
_aElectronic properties of doped semiconductors / _cB.I. Shklovskii, A.L. Efros. |
| 260 |
_aBerlin ; _aNew York : _bSpringer-Verlag, _c1984. |
||
| 300 |
_axii, 388 p. : _bill. ; _c23 cm. |
||
| 440 | 0 |
_aSpringer series in solid-state sciences ; _v45 |
|
| 500 | _aTranslation of: Ėlektronnye svoĭstva legirovannykh poluprovodnikov. | ||
| 504 | _aIncludes bibliographical references and index. | ||
| 650 | 0 | _aDoped semiconductors. | |
| 650 | 0 | _aElectron-electron interactions. | |
| 650 | 0 | _aHopping conduction. | |
| 650 | 0 | _aMaterials at low temperatures. | |
| 700 | 1 |
_aĖfros, A. L. _q(Alekseĭ Lʹvovich), _d1938- |
|
| 906 |
_a7 _bcbc _corignew _d1 _eocip _f19 _gy-gencatlg |
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| 942 |
_2lcc _cBK |
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